GAN063-650WSAQ
| Manufacturer Part Number | GAN063-650WSAQ |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Detailed Description | GANFET N-CH 650V 34.5A TO247-3 |
| Package | TO-247-3 |
| In Stock | 7632 pcs |
| Data sheet | All Dev Label Chgs 2/Aug/2020Mult Dev Wafer Test Chgs 4/Feb/2022GAN063-650WSAQCircuit Design& PCB GaN FETProbing Considered for Fast SwitchingUnderstanding Power GaN FET |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 |
|---|---|---|---|
| $8.534 | $7.869 | $6.72 | $6.101 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Supplier Device Package | TO-247-3 |
| Series | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| Power Dissipation (Max) | 143W (Ta) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34.5A (Ta) |
| Base Product Number | GAN063 |
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