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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GAN190-650FBEZ
Nexperia USA Inc.

GAN190-650FBEZ

Manufacturer Part Number GAN190-650FBEZ
Manufacturer Nexperia USA Inc.
Detailed Description 650 V, 190 MOHM GALLIUM NITRIDE
Package DFN5060-5
In Stock 38097 pcs
Data sheet GAN190-650FBE
Reference Price (In US Dollars)
1 10 100 500 1000
$1.666 $1.498 $1.227 $1.045 $0.881
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 12.2mA
Vgs (Max) +7V, -1.4V
Technology GaNFET (Gallium Nitride)
Supplier Device Package DFN5060-5
Series -
Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
Power Dissipation (Max) 125W (Ta)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Base Product Number GAN190

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GAN190-650FBEZ Datasheet PDF

Data sheet