GAN190-650FBEZ
Manufacturer Part Number | GAN190-650FBEZ |
---|---|
Manufacturer | Nexperia USA Inc. |
Detailed Description | 650 V, 190 MOHM GALLIUM NITRIDE |
Package | DFN5060-5 |
In Stock | 38097 pcs |
Data sheet | GAN190-650FBE |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$1.666 | $1.498 | $1.227 | $1.045 | $0.881 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
Vgs (Max) | +7V, -1.4V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | DFN5060-5 |
Series | - |
Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
Power Dissipation (Max) | 125W (Ta) |
Package / Case | 8-PowerVDFN |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount, Wettable Flank |
Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Base Product Number | GAN190 |
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