GAN3R2-100CBEAZ
| Manufacturer Part Number | GAN3R2-100CBEAZ |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Detailed Description | 100 V, 3.2 MOHM GALLIUM NITRIDE |
| Package | 8-WLCSP (3.5x2.13) |
| In Stock | 27215 pcs |
| Data sheet | GAN3R2-100CBE |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 |
|---|---|---|---|
| $1.984 | $1.781 | $1.459 | $1.242 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Nexperia USA Inc. series electronic components. We have 27215 pieces of Nexperia USA Inc. GAN3R2-100CBEAZ in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | 8-WLCSP (3.5x2.13) |
| Series | - |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 5V |
| Power Dissipation (Max) | 394W |
| Package / Case | 8-XFBGA, WLCSP |
| Package | Tape & Reel (TR) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Base Product Number | GAN3R2 |
Recommended Products
-
FQP9N30
MOSFET N-CH 300V 9A TO220-3onsemi -
GANGPRO-CC-STD
GANGPRO-CC-STDElprotronic Inc. -
GAN FET BOOK-WIPO
TEXT WIRELESS POWER HANDBOOKEPC -
NTMFS4C032NT3G
MOSFET N-CH 30V 13A/38A 5DFNonsemi -
GAN140-650FBEZ
650 V, 140 MOHM GALLIUM NITRIDENexperia USA Inc. -
GAN041-650WSBQ
GAN041-650WSB/SOT429/TO-247Nexperia USA Inc. -
GAN063-650WSAQ
GANFET N-CH 650V 34.5A TO247-3Nexperia USA Inc. -
GAN190-650EBEZ
650 V, 190 MOHM GALLIUM NITRIDENexperia USA Inc. -
GAN080-650EBEZ
650 V, 80 MOHM GALLIUM NITRIDE (Nexperia USA Inc. -
GAN FET BOOK - WIPO 2ND EDITION
TEXT WIRELESS POWER HANDBOOK-2NDEPC -
SI1305EDL-T1-GE3
MOSFET P-CH 8V 860MA SC70-3Vishay Siliconix -
GAN POWER DEVICES AND APPLICATIONS 1ST ED
TEXT GAN POWER DEVICES & APPSEPC -
IRL530NSTRL
MOSFET N-CH 100V 17A D2PAKInfineon Technologies -
GANGPRO-X
GANGPRO-XElprotronic Inc. -
GAN FET BOOK - DC/DC
TEXT DC-DC CONVERTER HANDBOOKEPC -
GAN190-650FBEZ
650 V, 190 MOHM GALLIUM NITRIDENexperia USA Inc. -
GAN140-650EBEZ
650 V, 140 MOHM GALLIUM NITRIDENexperia USA Inc. -
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (GNexperia USA Inc. -
SI1467DH-T1-BE3
MOSFET P-CH 20V 3A/2.7A SC70-6Vishay Siliconix -
GAN FET BOOK SIMPLIFIED CHINESE VERSION
TEXT GAN TRANSISTORSEPC