GAN041-650WSBQ
Reference Price (In US Dollars)
1
10
100
500
$7.55
$6.94
$5.861
$5.214
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.5V @ 1mA
Vgs (Max)
±20V
Technology
GaNFET (Cascode Gallium Nitride FET)
Supplier Device Package
TO-247-3
Series
-
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 10V
Power Dissipation (Max)
187W
Package / Case
TO-247-3
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47.2A
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GAN041-650WSBQ Datasheet PDF
Data sheet
Datasheet File Browse
