GAN080-650EBEZ
| Manufacturer Part Number | GAN080-650EBEZ |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Detailed Description | 650 V, 80 MOHM GALLIUM NITRIDE ( |
| Package | DFN8080-8 |
| In Stock | 17631 pcs |
| Data sheet | GAN080-650EBE |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $3.307 | $2.987 | $2.473 | $2.154 | $1.876 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 30.7mA |
| Vgs (Max) | +7V, -6V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | DFN8080-8 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 6V |
| Power Dissipation (Max) | 240W (Ta) |
| Package / Case | 8-VDFN Exposed Pad |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount, Wettable Flank |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 6 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
| Base Product Number | GAN080 |
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