GAN190-650EBEZ
Manufacturer Part Number | GAN190-650EBEZ |
---|---|
Manufacturer | Nexperia USA Inc. |
Detailed Description | 650 V, 190 MOHM GALLIUM NITRIDE |
Package | DFN8080-8 |
In Stock | 34334 pcs |
Data sheet | GAN190-650EBE |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$2.043 | $1.836 | $1.505 | $1.281 | $1.08 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Nexperia USA Inc. series electronic components. We have 34334 pieces of Nexperia USA Inc. GAN190-650EBEZ in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 12.2mA |
Vgs (Max) | +7V, -1.4V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | DFN8080-8 |
Series | - |
Rds On (Max) @ Id, Vgs | 190mOhm @ 3.9A, 6V |
Power Dissipation (Max) | 125W (Ta) |
Package / Case | 8-VDFN Exposed Pad |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount, Wettable Flank |
Input Capacitance (Ciss) (Max) @ Vds | 96 pF @ 400 V |
Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 6 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Base Product Number | GAN190 |
Recommended Products
-
SIA427ADJ-T1-GE3
MOSFET P-CH 8V 12A PPAK SC70-6Vishay Siliconix -
GAN FET BOOK - WIPO 2ND EDITION
TEXT WIRELESS POWER HANDBOOK-2NDEPC -
GAN063-650WSAQ
GANFET N-CH 650V 34.5A TO247-3Nexperia USA Inc. -
GAN FET BOOK-WIPO
TEXT WIRELESS POWER HANDBOOKEPC -
GAN FET BOOK - DC/DC
TEXT DC-DC CONVERTER HANDBOOKEPC -
FQP6N90C
MOSFET N-CH 900V 6A TO220-3onsemi -
GAN FET BOOK SIMPLIFIED CHINESE VERSION
TEXT GAN TRANSISTORSEPC -
GAN140-650FBEZ
650 V, 140 MOHM GALLIUM NITRIDENexperia USA Inc. -
GANGPRO-CC-STD
GANGPRO-CC-STDElprotronic Inc. -
2SJ610(TE16L1,NQ)
MOSFET P-CH 250V 2A PW-MOLDToshiba Semiconductor and Storage -
GAN140-650EBEZ
650 V, 140 MOHM GALLIUM NITRIDENexperia USA Inc. -
GAN POWER DEVICES AND APPLICATIONS 1ST ED
TEXT GAN POWER DEVICES & APPSEPC -
GAN041-650WSBQ
GAN041-650WSB/SOT429/TO-247Nexperia USA Inc. -
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (GNexperia USA Inc. -
GAN190-650FBEZ
650 V, 190 MOHM GALLIUM NITRIDENexperia USA Inc. -
IPD65R400CEAUMA1
MOSFET N-CH 650V 15.1A TO252-3Infineon Technologies -
GANGPRO-X
GANGPRO-XElprotronic Inc. -
GAN3R2-100CBEAZ
100 V, 3.2 MOHM GALLIUM NITRIDENexperia USA Inc. -
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3Infineon Technologies -
GAN080-650EBEZ
650 V, 80 MOHM GALLIUM NITRIDE (Nexperia USA Inc.