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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHD12N50E-GE3
Vishay Siliconix

SIHD12N50E-GE3

Manufacturer Part Number SIHD12N50E-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 550V 10.5A DPAK
Package D-Pak
In Stock 159123 pcs
Data sheet SIHD12N50E
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.632 $0.566 $0.455 $0.374 $0.31 $0.288 $0.278 $0.271
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D-Pak
Series E
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Power Dissipation (Max) 114W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tube
Operating Temperature -55°C ~ 150°C (TA)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Base Product Number SIHD12

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SIHD12N50E-GE3 Datasheet PDF

Data sheet