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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHB5N80AE-GE3
Vishay Siliconix

SIHB5N80AE-GE3

Manufacturer Part Number SIHB5N80AE-GE3
Manufacturer Vishay Siliconix
Detailed Description E SERIES POWER MOSFET D2PAK (TO-
Package D²PAK (TO-263)
In Stock 148755 pcs
Data sheet E Series Power MOSFET
Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.628 $0.563 $0.439 $0.363 $0.286 $0.267 $0.254 $0.244
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series E
Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max) 62.5W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 321 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)

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SIHB5N80AE-GE3 Datasheet PDF

Data sheet

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