SIHB33N60ET1-GE3
Manufacturer Part Number | SIHB33N60ET1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 600V 33A TO263 |
Package | D²PAK (TO-263) |
In Stock | 24848 pcs |
Data sheet | SiHB33N60E |
Reference Price (In US Dollars)
1 | 10 | 100 |
---|---|---|
$2.452 | $2.201 | $1.803 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263) |
Series | E |
Rds On (Max) @ Id, Vgs | 99mOhm @ 16.5A, 10V |
Power Dissipation (Max) | 278W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3508 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Base Product Number | SIHB33 |
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