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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHB30N60E-E3
Vishay Siliconix

SIHB30N60E-E3

Manufacturer Part Number SIHB30N60E-E3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 600V 29A D2PAK
Package D²PAK (TO-263)
In Stock 3961 pcs
Data sheet Additional Assembly Site 21/Oct/2016SiHB30N60E
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series -
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Base Product Number SIHB30

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