SIHD5N80AE-GE3
| Manufacturer Part Number | SIHD5N80AE-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | E SERIES POWER MOSFET DPAK (TO-2 |
| Package | TO-252AA |
| In Stock | 249433 pcs |
| Data sheet | SIHD5N80AE |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
|---|---|---|---|---|---|---|---|
| $0.447 | $0.4 | $0.312 | $0.257 | $0.203 | $0.19 | $0.18 | $0.173 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-252AA |
| Series | E |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 321 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
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