SIHB22N65E-T1-GE3
| Manufacturer Part Number | SIHB22N65E-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | N-CHANNEL 650V |
| Package | D²PAK (TO-263) |
| In Stock | 26608 pcs |
| Data sheet | SIHB22N65E |
Reference Price (In US Dollars)
| 1 | 10 | 100 |
|---|---|---|
| $1.945 | $1.748 | $1.432 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Vishay Siliconix series electronic components. We have 26608 pieces of Vishay Siliconix SIHB22N65E-T1-GE3 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D²PAK (TO-263) |
| Series | - |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Power Dissipation (Max) | 227W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2415 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
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