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EPC2108ENGRT
Manufacturer Part Number
EPC2108ENGRT
Manufacturer
EPC
Detailed Description
TRANS GAN 3N-CH BUMPED DIE
Package
9-BGA (1.35x1.35)
In Stock
99105 pcs
Data sheet
EPC2108 Datasheet
Reference Price (In US Dollars)
1
10
25
100
250
500
1000
$0.83
$0.748
$0.668
$0.601
$0.534
$0.468
$0.387
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 100µA, 2.5V @ 20µA
Supplier Device Package
9-BGA (1.35x1.35)
Series
eGaN®
Rds On (Max) @ Id, Vgs
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Power - Max
-
Packaging
Original-Reel®
Package / Case
9-VFBGA
Other Names
917-EPC2108ENGRDKR
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Product Attribute
Attribute Value
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 5V, 0.044nC @ 5V
FET Type
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V, 100V
Detailed Description
Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current - Continuous Drain (Id) @ 25°C
1.7A, 500mA
EPC2108ENGRT Datasheet PDF
Data sheet
Datasheet File Browse
