EPC2100
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
Die
Series
eGaN®
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Power - Max
-
Package / Case
Die
Package
Tape & Reel (TR)
Operating Temperature
-40°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Configuration
2 N-Channel (Half Bridge)
Base Product Number
EPC210
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Data sheet
Datasheet File Browse
