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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2111ENGRT
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EPC2111ENGRT

Manufacturer Part Number EPC2111ENGRT
Manufacturer EPC
Detailed Description TRANS GAN ASYMMETRICAL HALF BRID
Package Die
In Stock 47602 pcs
Data sheet EPC2111
Reference Price (In US Dollars)
1000
$0.725
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 5mA
Supplier Device Package Die
Series -
Rds On (Max) @ Id, Vgs 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Power - Max -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2111ENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 30V 16A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C 16A (Ta)

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EPC2111ENGRT Datasheet PDF

Data sheet