EPC2101
Reference Price (In US Dollars)
1
10
100
$3.304
$2.983
$2.47
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 3mA, 2.5V @ 12mA
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
Die
Series
eGaN®
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Power - Max
-
Package / Case
Die
Package
Tape & Reel (TR)
Operating Temperature
-40°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V, 1200pF @ 30V
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V, 12nC @ 5V
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Configuration
2 N-Channel (Half Bridge)
Base Product Number
EPC210
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Data sheet
Datasheet File Browse
