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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2101ENG
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EPC2101ENG

Manufacturer Part Number EPC2101ENG
Manufacturer EPC
Detailed Description TRANS GAN 2N-CH 60V BUMPED DIE
Package Die
In Stock 11953 pcs
Data sheet EPC2101 Preliminary Datasheet
Reference Price (In US Dollars)
10 30 100 250 500
$4.251 $3.933 $3.614 $3.295 $3.082
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 2mA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 20A, 5V
Power - Max -
Packaging Tray
Package / Case Die
Other Names 917-EPC2101ENG
EPC2101ENGR_H5
EPC2101ENGRH5
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Product Attribute Attribute Value
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A

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EPC2101ENG Datasheet PDF

Data sheet