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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD30N06S223ATMA2
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IPD30N06S223ATMA2

Manufacturer Part Number IPD30N06S223ATMA2
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 55V 30A TO252-31
Package PG-TO252-3-11
In Stock 159850 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Fab 12/Feb/2019
Reference Price (In US Dollars)
1 10 100 500 1000
$0.557 $0.497 $0.387 $0.32 $0.253
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 50µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-11
Series OptiMOS™
Rds On (Max) @ Id, Vgs 23mOhm @ 21A, 10V
Power Dissipation (Max) 100W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Base Product Number IPD30N06

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IPD30N06S223ATMA2 Datasheet PDF

Data sheet

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