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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD35N12S3L24ATMA1
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IPD35N12S3L24ATMA1

Manufacturer Part Number IPD35N12S3L24ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 120V 35A TO252-3
Package PG-TO252-3
In Stock 167290 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Wafer Test Add 27/Apr/2017
Reference Price (In US Dollars)
1 10 100 500 1000
$0.585 $0.523 $0.408 $0.337 $0.266
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.4V @ 39µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 24mOhm @ 35A, 10V
Power Dissipation (Max) 71W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Base Product Number IPD35N12

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IPD35N12S3L24ATMA1 Datasheet PDF

Data sheet