IPD35N12S3L24ATMA1
Manufacturer Part Number | IPD35N12S3L24ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 120V 35A TO252-3 |
Package | PG-TO252-3 |
In Stock | 167290 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Wafer Test Add 27/Apr/2017 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.585 | $0.523 | $0.408 | $0.337 | $0.266 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.4V @ 39µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V |
Power Dissipation (Max) | 71W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Base Product Number | IPD35N12 |
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