IPD33CN10NGATMA1
Manufacturer Part Number | IPD33CN10NGATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 100V 27A TO252-3 |
Package | PG-TO252-3 |
In Stock | 184814 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Chgs 22/Dec/2021 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.564 | $0.503 | $0.392 | $0.324 | $0.256 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 184814 pieces of Infineon Technologies IPD33CN10NGATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 29µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 33mOhm @ 27A, 10V |
Power Dissipation (Max) | 58W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Base Product Number | IPD33CN10 |
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