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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD26N06S2L35ATMA1
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IPD26N06S2L35ATMA1

Manufacturer Part Number IPD26N06S2L35ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 55V 30A TO252-3
Package PG-TO252-3-11
In Stock 6605 pcs
Data sheet Part Number GuideCover Tape Width Cancellation 14/Jul/2015Cover Tape Width Update 17/Jun/2015Mult Dev Wafer Fab 12/Feb/2019
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 26µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-11
Series OptiMOS™
Rds On (Max) @ Id, Vgs 35mOhm @ 13A, 10V
Power Dissipation (Max) 68W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 621 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Base Product Number IPD26N

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IPD26N06S2L35ATMA1 Datasheet PDF

Data sheet

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