IPD30N12S3L31ATMA1
Manufacturer Part Number | IPD30N12S3L31ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CHANNEL_100+ |
Package | PG-TO252-3-11 |
In Stock | 213183 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Wafer Test Add 27/Apr/2017 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.45 | $0.404 | $0.315 | $0.26 | $0.205 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 213183 pieces of Infineon Technologies IPD30N12S3L31ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.4V @ 29µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3-11 |
Series | Automotive, AEC-Q101, OptiMOS®-T |
Rds On (Max) @ Id, Vgs | 31mOhm @ 30A, 10V |
Power Dissipation (Max) | 57W |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Base Product Number | IPD30N12 |
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