IPB039N10N3GE8197ATMA1
| Manufacturer Part Number | IPB039N10N3GE8197ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | N-CHANNEL POWER MOSFET |
| Package | PG-TO263-7-3 |
| In Stock | 6455 pcs |
| Data sheet |
Reference Price (In US Dollars)
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 6455 pieces of Infineon Technologies IPB039N10N3GE8197ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-7-3 |
| Series | OptiMOS™ 3 |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| Power Dissipation (Max) | 214W (Tc) |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
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