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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB043N10NF2SATMA1
Infineon Technologies

IPB043N10NF2SATMA1

Manufacturer Part Number IPB043N10NF2SATMA1
Manufacturer Infineon Technologies
Detailed Description AUTOMOTIVE MOSFET
Package PG-TO263-3
In Stock 74003 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100
$0.832 $0.747 $0.6
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.8V @ 93µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series StrongIRFET™ 2
Rds On (Max) @ Id, Vgs 4.35mOhm @ 80A, 10V
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 135A (Tc)

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IPB043N10NF2SATMA1 Datasheet PDF