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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB032N10N5ATMA1
Infineon Technologies

IPB032N10N5ATMA1

Manufacturer Part Number IPB032N10N5ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 166A TO263-7
Package PG-TO263-7
In Stock 26772 pcs
Data sheet Mult Dev Pkg Box Chg 3/Jan/2018OptiMOS A/T Chgs 2/Dec/2021
Reference Price (In US Dollars)
1 10 100 500
$2.361 $2.121 $1.738 $1.479
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.8V @ 125µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-7
Series OptiMOS™
Rds On (Max) @ Id, Vgs 3.2mOhm @ 83A, 10V
Power Dissipation (Max) 187W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 166A (Tc)
Base Product Number IPB032

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IPB032N10N5ATMA1 Datasheet PDF

Data sheet