IPB029N06N3GE8187ATMA1
Manufacturer Part Number | IPB029N06N3GE8187ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 60V 120A D2PAK |
Package | PG-TO263-3 |
In Stock | 62217 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018OptiMOS Assembly Site Add 2/Jan/2018 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$1.061 | $0.954 | $0.767 | $0.63 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 62217 pieces of Infineon Technologies IPB029N06N3GE8187ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 118µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
Power Dissipation (Max) | 188W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Base Product Number | IPB029 |
Recommended Products
-
IPB031NE7N3GATMA1
MOSFET N-CH 75V 100A TO263-3Infineon Technologies -
IPB027N10N3GATMA1
MOSFET N-CH 100V 120A D2PAKInfineon Technologies -
IPB030N08N3GATMA1
MOSFET N-CH 80V 160A TO263-7Infineon Technologies -
IPB025N08N3 G
N-CHANNEL POWER MOSFETInfineon Technologies -
IPB029N06N3GATMA1
MOSFET N-CH 60V 120A D2PAKInfineon Technologies -
IPB025N10N3GATMA1
MOSFET N-CH 100V 180A TO263-7Infineon Technologies -
IPB034N03LGATMA1
MOSFET N-CH 30V 80A D2PAKInfineon Technologies -
IPB024N10N5ATMA1
MOSFET N-CH 100V 180A TO263-7Infineon Technologies -
IPB025N08N3GATMA1
MOSFET N-CH 80V 120A D2PAKInfineon Technologies -
IPB027N10N5ATMA1
MOSFET N-CH 100V 120A D2PAKInfineon Technologies -
IPB029N06NF2SATMA1
TRENCH 40<-<100VInfineon Technologies -
IPB026N10NF2SATMA1
TRENCH >=100VInfineon Technologies -
IPB034N06L3GATMA1
MOSFET N-CH 60V 90A D2PAKInfineon Technologies -
IPB031N08N5ATMA1
MOSFET N-CH 80V 120A D2PAKInfineon Technologies -
IPB025N10N3GE8187ATMA1
MOSFET N-CH 100V 180A TO263-7Infineon Technologies -
IPB026N06NATMA1
MOSFET N-CH 60V 25A/100A D2PAKInfineon Technologies -
IPB031NE7N3G
IPB031NE7 - 12V-300V N-CHANNEL PInfineon Technologies -
IPB032N10N5ATMA1
MOSFET N-CH 100V 166A TO263-7Infineon Technologies -
IPB031NE7N3 G
N-CHANNEL POWER MOSFETInfineon Technologies -
IPB033N10N5LFATMA1
MOSFET N-CH 100V 120A TO263-3Infineon Technologies