IPB048N15N5LFATMA1
Manufacturer Part Number | IPB048N15N5LFATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 150V 120A D2PAK |
Package | PG-TO263-3 |
In Stock | 16937 pcs |
Data sheet | Mult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Chgs 3/Nov/2022 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 |
---|---|---|---|
$3.823 | $3.453 | $2.858 | $2.489 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.9V @ 255µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | OptiMOS™-5 |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 100A, 10V |
Power Dissipation (Max) | 313W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 75 V |
Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Base Product Number | IPB048 |
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