C3M0065090J
Reference Price (In US Dollars)
1
10
100
500
$5.864
$5.388
$4.551
$4.048
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.1V @ 5mA
Vgs (Max)
+19V, -8V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-263-7
Series
C3M™
Rds On (Max) @ Id, Vgs
78mOhm @ 20A, 15V
Power Dissipation (Max)
113W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 15 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Base Product Number
C3M0065090
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C3M0065090J Datasheet PDF
Data sheet
Datasheet File Browse
