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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.6V @ 1.86mA
Vgs (Max)
+19V, -8V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4L
Series
C3M™
Rds On (Max) @ Id, Vgs
157mOhm @ 6.76A, 15V
Power Dissipation (Max)
98W (Tc)
Package / Case
TO-247-4
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
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