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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.5V @ 5mA
Vgs (Max)
+19V, -8V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4L
Series
C3M™
Rds On (Max) @ Id, Vgs
78mOhm @ 20A, 15V
Power Dissipation (Max)
113.5W (Tc)
Package / Case
TO-247-4
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 15 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Base Product Number
C3M0065100
Recommended Products
C3M0060065JSICFET N-CH 650V 36A TO263-7Wolfspeed, Inc.
C3M0060065J-TRSIC, MOSFET, 60M, 650V, TO-263-7Wolfspeed, Inc.
