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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.6V @ 23mA
Vgs (Max)
+15V, -4V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4L
Series
C3M™
Rds On (Max) @ Id, Vgs
22.3mOhm @ 75A, 15V
Power Dissipation (Max)
556W (Tc)
Package / Case
TO-247-4
Package
Tube
Operating Temperature
-40°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
6085 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
211 nC @ 15 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
15V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
115A (Tc)
Base Product Number
C3M0016120
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