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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SISS80DN-T1-GE3
Vishay Siliconix

SISS80DN-T1-GE3

Manufacturer Part Number SISS80DN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 20V 58.3A/210A PPAK
Package PowerPAK® 1212-8S
In Stock 144118 pcs
Data sheet N-Channel 20 V (D-S) MOSFET
Reference Price (In US Dollars)
1 10 100 500 1000
$0.638 $0.572 $0.46 $0.378 $0.313
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) +12V, -8V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8S
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V
Power Dissipation (Max) 5W (Ta), 65W (Tc)
Package / Case PowerPAK® 1212-8S
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)
Base Product Number SISS80

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SISS80DN-T1-GE3 Datasheet PDF

Data sheet