SISS5110DN-T1-GE3
| Manufacturer Part Number | SISS5110DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | N-CHANNEL 100 V (D-S) MOSFET POW |
| Package | PowerPAK® 1212-8S |
| In Stock | 127761 pcs |
| Data sheet | SISS5110DN |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.675 | $0.603 | $0.47 | $0.388 | $0.307 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 10A, 10V |
| Power Dissipation (Max) | 4.8W (Ta), 56.8W (Tc) |
| Package / Case | PowerPAK® 1212-8S |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 46.4A (Tc) |
| Base Product Number | SISS5110 |
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