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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SISS30DN-T1-GE3
Vishay Siliconix

SISS30DN-T1-GE3

Manufacturer Part Number SISS30DN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 80V 15.9A/54.7A PPAK
Package PowerPAK® 1212-8S
In Stock 169695 pcs
Data sheet SISS30DN
Reference Price (In US Dollars)
1 10 100 500 1000
$0.464 $0.416 $0.325 $0.268 $0.212
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.8V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8S
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 8.25mOhm @ 10A, 10V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Package / Case PowerPAK® 1212-8S
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 15.9A (Ta), 54.7A (Tc)
Base Product Number SISS30

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SISS30DN-T1-GE3 Datasheet PDF

Data sheet