SISS66DN-T1-GE3
| Manufacturer Part Number | SISS66DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CH 30V 49.1/178.3A PPAK |
| Package | PowerPAK® 1212-8S |
| In Stock | 184258 pcs |
| Data sheet | SiSS66DN |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.563 | $0.502 | $0.391 | $0.323 | $0.255 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Vishay Siliconix series electronic components. We have 184258 pieces of Vishay Siliconix SISS66DN-T1-GE3 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® 1212-8S |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 1.38mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Package / Case | PowerPAK® 1212-8S |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 3327 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | Schottky Diode (Body) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 49.1A (Ta), 178.3A (Tc) |
| Base Product Number | SISS66 |
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