SIS410DN-T1-GE3
Manufacturer Part Number | SIS410DN-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 20V 35A PPAK 1212-8 |
Package | PowerPAK® 1212-8 |
In Stock | 193460 pcs |
Data sheet | New Solder Plating Site 18/Apr/2023Mult Dev 08/Dec/2022SIS410DN |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.431 | $0.386 | $0.301 | $0.249 | $0.196 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® 1212-8 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Package / Case | PowerPAK® 1212-8 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Base Product Number | SIS410 |
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