SIS176LDN-T1-GE3
Manufacturer Part Number | SIS176LDN-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | N-CHANNEL 70 V (D-S) MOSFET POWE |
Package | PowerPAK® 1212-8 |
In Stock | 215522 pcs |
Data sheet | New Solder Plating Site 18/Apr/2023Mult Dev 08/Dec/2022SIS176LDN |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.37 | $0.329 | $0.256 | $0.212 | $0.167 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® 1212-8 |
Series | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 10.9mOhm @ 10A, 4.5V |
Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
Package / Case | PowerPAK® 1212-8 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 35 V |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 4.5V |
Drain to Source Voltage (Vdss) | 70 V |
Current - Continuous Drain (Id) @ 25°C | 12.9A (Ta), 42.3A (Tc) |
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