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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIS178LDN-T1-GE3
Vishay Siliconix

SIS178LDN-T1-GE3

Manufacturer Part Number SIS178LDN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description N-CHANNEL 70 V (D-S) MOSFET POWE
Package PowerPAK® 1212-8
In Stock 244491 pcs
Data sheet New Solder Plating Site 18/Apr/2023Mult Dev 08/Dec/2022SIS178LDN
Reference Price (In US Dollars)
1 10 100 500 1000
$0.364 $0.322 $0.247 $0.195 $0.156
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Package / Case PowerPAK® 1212-8
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1135 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs 28.5 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 70 V
Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 45.3A (Tc)

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SIS178LDN-T1-GE3 Datasheet PDF

Data sheet

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