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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIS330DN-T1-GE3
Vishay Siliconix

SIS330DN-T1-GE3

Manufacturer Part Number SIS330DN-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 30V 35A PPAK1212-8
Package PowerPAK® 1212-8
In Stock 5217 pcs
Data sheet Multiple Fabracation Changes09/Jul/2014OBS 11/Feb/2016SIS330DN-T1-GE3
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.6mOhm @ 10A, 10V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Package / Case PowerPAK® 1212-8
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Base Product Number SIS330

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SIS330DN-T1-GE3 Datasheet PDF

Data sheet