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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2366DS-T1-BE3
Vishay Siliconix

SI2366DS-T1-BE3

Manufacturer Part Number SI2366DS-T1-BE3
Manufacturer Vishay Siliconix
Detailed Description N-CHANNEL 30-V (D-S) MOSFET
Package SOT-23-3 (TO-236)
In Stock 473378 pcs
Data sheet SI2366DS-T1-GE3
Reference Price (In US Dollars)
1 10 100 500 1000
$0.189 $0.162 $0.121 $0.095 $0.073
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series -
Rds On (Max) @ Id, Vgs 36mOhm @ 4.5A, 10V
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 335 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 5.8A (Tc)

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SI2366DS-T1-BE3 Datasheet PDF

Data sheet