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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2337DS-T1-GE3
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SI2337DS-T1-GE3

Manufacturer Part Number SI2337DS-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 80V 2.2A SOT23-3
Package SOT-23-3 (TO-236)
In Stock 234672 pcs
Data sheet Material ComplianceNew Solder Plating Site 18/Apr/2023SI2337DS
Reference Price (In US Dollars)
1 10 100 500 1000
$0.402 $0.361 $0.282 $0.233 $0.184
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V
Power Dissipation (Max) 760mW (Ta), 2.5W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Operating Temperature -50°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Base Product Number SI2337

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SI2337DS-T1-GE3 Datasheet PDF

Data sheet

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