SI2365EDS-T1-GE3
| Manufacturer Part Number | SI2365EDS-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET P-CH 20V 5.9A TO236 |
| Package | SOT-23-3 (TO-236) |
| In Stock | 1041755 pcs |
| Data sheet | Material ComplianceNew Solder Plating Site 18/Apr/2023SI2365EDS |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.14 | $0.106 | $0.066 | $0.045 | $0.035 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 4A, 4.5V |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Package | Tape & Reel (TR) |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 8 V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Base Product Number | SI2365 |
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