SI2372DS-T1-GE3
Manufacturer Part Number | SI2372DS-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 30V 4A/5.3A SOT23-3 |
Package | SOT-23-3 (TO-236) |
In Stock | 3852 pcs |
Data sheet | Material ComplianceMult Mosfet EOL 30/Aug/2018SI2372DS |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 33mOhm @ 3A, 10V |
Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 288 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 8.9 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 5.3A (Tc) |
Base Product Number | SI2372 |
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