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IRFD113PBF
Reference Price (In US Dollars)
1
10
100
500
1000
2000
5000
10000
$0.802
$0.72
$0.579
$0.475
$0.394
$0.367
$0.353
$0.344
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
4-HVMDIP
Series
-
Rds On (Max) @ Id, Vgs
800mOhm @ 800mA, 10V
Power Dissipation (Max)
1W (Tc)
Package / Case
4-DIP (0.300", 7.62mm)
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
800mA (Tc)
Base Product Number
IRFD113
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Data sheet
Datasheet File Browse
