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IRFD110
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
4-HVMDIP
Series
-
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V
Power Dissipation (Max)
1.3W (Ta)
Package / Case
4-DIP (0.300", 7.62mm)
Package
Bulk
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Base Product Number
IRFD110
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Data sheet
Datasheet File Browse
