IRFD1Z3
Manufacturer Part Number | IRFD1Z3 |
---|---|
Manufacturer | Harris Corporation |
Detailed Description | SMALL SIGNAL N-CHANNEL MOSFET |
Package | 4-DIP, Hexdip |
In Stock | 163737 pcs |
Data sheet |
Reference Price (In US Dollars)
579 |
---|
$0.207 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-DIP, Hexdip |
Series | - |
Rds On (Max) @ Id, Vgs | 3.2Ohm @ 250mA, 10V |
Power Dissipation (Max) | 1W (Tc) |
Package / Case | 4-DIP (0.300", 7.62mm) |
Package | Bulk |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
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