IRFD112
| Manufacturer Part Number | IRFD112 |
|---|---|
| Manufacturer | Harris Corporation |
| Detailed Description | SMALL SIGNAL N-CHANNEL MOSFET |
| Package | 4-DIP, Hexdip |
| In Stock | 250529 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 807 |
|---|
| $0.14 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 4-DIP, Hexdip |
| Series | - |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 800mA, 10V |
| Power Dissipation (Max) | 1W (Tc) |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Package | Bulk |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 135 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
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