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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN4R806PL,L1Q
Toshiba Semiconductor and Storage

TPN4R806PL,L1Q

Manufacturer Part Number TPN4R806PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N-CH 60V 72A 8TSON
Package 8-TSON Advance (3.1x3.1)
In Stock 239892 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.331 $0.295 $0.23 $0.19 $0.15 $0.14
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 300µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Series U-MOSIX-H
Rds On (Max) @ Id, Vgs 3.5mOhm @ 36A, 10V
Power Dissipation (Max) 630mW (Ta), 104W (Tc)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature 175°C
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Base Product Number TPN4R806

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TPN4R806PL,L1Q Datasheet PDF