TPN1110ENH,L1Q
| Manufacturer Part Number | TPN1110ENH,L1Q |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N-CH 200V 7.2A 8TSON |
| Package | 8-TSON Advance (3.1x3.1) |
| In Stock | 178754 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 |
|---|---|---|---|---|---|
| $0.612 | $0.548 | $0.428 | $0.353 | $0.279 | $0.26 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Series | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Package / Case | 8-PowerVDFN |
| Package | Tape & Reel (TR) |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Base Product Number | TPN1110 |
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