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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TPN2R503NC,L1Q
Toshiba Semiconductor and Storage

TPN2R503NC,L1Q

Manufacturer Part Number TPN2R503NC,L1Q
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N CH 30V 40A 8TSON-ADV
Package 8-TSON Advance (3.1x3.1)
In Stock 5929 pcs
Data sheet DK OBS NOTICESPC584Bx Manual/Errata 23/Jul/2020
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.3V @ 500µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Series U-MOSVIII
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 10V
Power Dissipation (Max) 700mW (Ta), 35W (Tc)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Base Product Number TPN2R503

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TPN2R503NC,L1Q Datasheet PDF

Data sheet